| 摘要 |
PURPOSE:To enable a TFT load type SRAM to be lessened in number of manufacturing processes by a method wherein it is so structured that a TFT load and a driver transistor are interconnected together through the same contact hole. CONSTITUTION:A semiconductor memory device of this design is constituted including a pair of transfer transistors, a pair of drive transistors, and a pair of TFT loads and provided with a memory cell possessed of a connection region where a drain region 18 and a gate electrode 15 of the TFT load are interconnected to a gate electrode 4 or an N-drain region 6 of the driver transistor. On the connection region, at least the drain and the gate electrode of the TFT load and the gate electrode or the drain of the driver transistor are laminated through the intermediary of insulating films 7, 9, and 16 respectively. The laminated uppermost drain region 18 is connected to the side face of the gate electrode 15 located at a halfway point and the surface of the lowermost electrode 4. |
