发明名称 High voltage majority carrier rectifier
摘要 A rectifier circuit is provided including a MOSFET having a gate, a drain, and a source terminal. A Schottky diode is connected in series with the MOSFET. The cathode of the Schottky diode is connected to the source of the MOSFET. A zener diode is connected in parallel with a capacitor. A recharging diode has its anode connected to the junction between the MOSFET and the Schottky diode and its cathode connected to the cathode of the zener diode, with the drain serving as the cathode of rectifier circuit and the anode of the Schottky diode serving as the anode of the rectifier circuit. The rectifier circuit has a fast recovery time and is suitable for both high frequency and high voltage, power conversion applications. The rectifier circuit can be used in place of P-N junction fast recovery diodes with less complex snubbers and switch aiding circuits.
申请公布号 US5153453(A) 申请公布日期 1992.10.06
申请号 US19910745791 申请日期 1991.08.16
申请人 INTERNATIONAL BUSINESS MACHINES CORP. 发明人 WALTERS, MICHAEL M.
分类号 H02M7/21;G05F3/18;G05F3/24;H01L29/861;H02M7/12 主分类号 H02M7/21
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