| 摘要 |
PURPOSE:To provide a technique for strengthening a connecting strength of a fine gold wire to a lead after wire bonding. CONSTITUTION:Part to be bonded to a terminal electrode of an inner lead of a semiconductor chip or whole leads to be used for a semiconductor device is silver-plated, and the silver-plated bonding part of the inner lead is annealed. Part to be bonded to the bonding wire electrically connected to the terminal electrode of the inner lead of the leads of the chip or the whole is silver-plated, the silver-plated layer part to be bonded of the inner lead is annealed at 200 deg.C or higher, and the annealed part of the inner lead is electrically connected to the electrode terminal on the chip via a fine gold wire. |
