发明名称 THIN FILM FIELD EFFECT TRANSISTOR
摘要 A method of manufacture of thin film, field-effect transistors formed on a transparent substrate and with transparent, conductive source and drain electrodes, uses initially deposited gate electrodes as a mask in association with photolithographic processing using radiation transmitted through the substrate and electrodes to minimise parasitic capacitance between the gate and source and drain electrodes.
申请公布号 CA1308495(C) 申请公布日期 1992.10.06
申请号 CA19880576741 申请日期 1988.09.08
申请人 NATIONAL RESEARCH DEVELOPMENT CORPORATION 发明人 WRIGHT, STEPHEN W.;JUDGE, CHARLES P.;LEE, MICHAEL J.
分类号 H01L27/12;H01L21/34;H01L29/78;H01L29/786 主分类号 H01L27/12
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