发明名称 |
THIN FILM FIELD EFFECT TRANSISTOR |
摘要 |
A method of manufacture of thin film, field-effect transistors formed on a transparent substrate and with transparent, conductive source and drain electrodes, uses initially deposited gate electrodes as a mask in association with photolithographic processing using radiation transmitted through the substrate and electrodes to minimise parasitic capacitance between the gate and source and drain electrodes. |
申请公布号 |
CA1308495(C) |
申请公布日期 |
1992.10.06 |
申请号 |
CA19880576741 |
申请日期 |
1988.09.08 |
申请人 |
NATIONAL RESEARCH DEVELOPMENT CORPORATION |
发明人 |
WRIGHT, STEPHEN W.;JUDGE, CHARLES P.;LEE, MICHAEL J. |
分类号 |
H01L27/12;H01L21/34;H01L29/78;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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