Positive type photoresist composition comprising as a photosensitive ingredient a derivative of a triphenylmethane condensed with an o-quinone diazide

摘要

A positive type photoresist composition comprising at least one light-sensitive material, as defined herein, and an alkali-soluble novolak resin, has a high resolving power, particularly when used in semiconductor devices, accurately reproduces mask dimensions over a wide photomask line width range, from a resist pattern in a cross-sectional form having a high aspect ratio in a pattern having a line width of no greater than 1 mu m, has a wide developing latitude and excellent heat resistance.