| 摘要 |
PURPOSE:To restrain holes from occurring in a P-type CdS even if it is of P-type so as to enhance the P-type CdS in crystallinity, reliability, and yield for the formation of a light emitting element high in emission efficiency of light short in wavelength by a method wherein CdS is doped with oxygen 10<16>-10<19> atom/cm<2> in a dose to form a P-type CdS. CONSTITUTION:A CdS layer 2 is epitaxially grown on a GaAs single crystal substrate 1 through a molecular beam epitaxy method or the like. Thereafter, a CdS 2a is doped with oxygen 10<16>-100<19>atom/cm<2> in a dose to form a P-type CdS. At this point, If oxygen is less than 10<16> atom/cm<2> in dose, the CdS 2a can not be fully turned into P-type, and if oxygen exceeds 10<19> atom/cm<2> in dose, the CdS 2a is not good enough in crystallinity. CdS doped with oxygen atoms where holes are restrained from occurring is excellent in crystallinity and turned into P-type. As the CdS concerned is shallow in acceptor level, high in activation rate, and excellent in crystallinity, a light emitting element which emits light of short wavelengths and is high in luminous efficiency can be obtained. |
