发明名称 |
Semiconductor light emitting device |
摘要 |
Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5x1017 cm-3 to 5x1018 cm-3.
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申请公布号 |
US5153889(A) |
申请公布日期 |
1992.10.06 |
申请号 |
US19910747128 |
申请日期 |
1991.08.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGAWARA, HIDETO;ISHIKAWA, MASAYUKI;KOKUBUN, YOSHIHIRO;NISHIKAWA, YUKIE;NARITSUKA, SHIGEYA;ITAYA, KAZUHIKO;HATAKOSHI, GENICHI;SUZUKI, MARIKO |
分类号 |
H01L33/00;H01L33/10;H01L33/14;H01L33/30;H01S5/042;H01S5/183;H01S5/22;H01S5/30;H01S5/32;H01S5/323;H01S5/343 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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