| 摘要 |
<p>PURPOSE:To miniaturize a chip size and to reduce the damage or flaw of a circuit generated during a manufacturing process by forming an integrated transistor circuit on an upper support base but not on a sensor substrate. CONSTITUTION:A sensor substrate 1 wherein a groove 13 is formed to the periphery thereof so as to form a bending part 11 and a wt. part 12 and a detection resistor element 10 is formed to the upper part of the bending part 10 is provided. An upper support base 3 and a lower support base 4 are bonded to the upper and lower surfaces of the sensor substrate 1 so as to substantially form gaps 14, 15. Further, an external connection pad 5 and an internal connection pad 6 are bonded to the upper surface of the upper support base 3 and an integrated transistor circuit 9 amplifying the detection voltage of the detection resistor element 10 is also formed to the upper support base 3.</p> |
