| 摘要 |
PURPOSE:To obtain the mask for producing semiconductor devices which can simultaneously and easily resolve patterns with high accuracy on respective regions if there is a difference in height between a memory cell region of a DRAM, etc., and a peripheral circuit region and the semiconductor device. CONSTITUTION:This mask for producing the semiconductor devices is constituted by having a light transparent mask substrate 1 formed with recessed parts 2 and projecting parts 4 on one surface to be a main surface and light shielding film patterns 5 formed on the recessed parts 2 and projecting parts 4 on the main surface of the substrate 1, forming the recessed parts 2 on the main surface of the mask substrate 1 in the regions corresponding to the high regions of the substrate surface to be exposed and forming the projecting parts 4 on the main surface of the mask substrate 1 in the regions corresponding to the low regions of the substrate surface to be exposed. This process is so constituted as to execute projection exposing by using the above-mentioned mask and disposing the main surface of the mask and the semiconductor substrate surface having the rugged parts so as to face each other. |
