| 摘要 |
PURPOSE:To obtain semiconductor material wherein propagation of a particular crosshatched pattern and dislocation caused by a GaAsP substrate is prevented. CONSTITUTION:An Si-doped GaInP layer 2 and a GaInP layer 3 are formed in order on a GaAsP substrate 1, and a device structure is obtained. When a GaInP epitaxial layer 2 doped with Si is formed, a layer of low dislocation density having a flat surface is obtained. Hence, when an LED or an LD is formed by using the semiconductor material obtained by this invention, the quality and the reliability can be remarkably improved. The above material is especially effective for orange to blue light emitting elements. |
