发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To enable a capacity portion to be constructed on a bit line and also positioning margin between the bit line and a bit line contact to be increased. CONSTITUTION:Element regions 1 are alternately aligned, a bit line 3 is placed between these and then one bit line 3 is allowed to contact the element regions 1 at both sides. Since a portion which does not overlap the bit line 3 is produced at the element region 1, a capacity portion can be constructed on the bit lines, thus enabling a positioning margin of the bit line contact to be increased. Also, when both the element regions and the bit lines are skewly merged for a word line, the same effect as above can be obtained since a portion where the element regions do not overlap the bit lines is produced.
申请公布号 JPH04279055(A) 申请公布日期 1992.10.05
申请号 JP19910000642 申请日期 1991.01.08
申请人 NEC CORP 发明人 HAMADA TAKEHIKO
分类号 H01L27/10;H01L21/8242;H01L27/108 主分类号 H01L27/10
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