INSULATED GATE TYPE BIPOLAR TRANSISTOR AND MANUFACTURE THEREOF,申请号JP19910034857-传众专利搜索

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发明名称	INSULATED GATE TYPE BIPOLAR TRANSISTOR AND MANUFACTURE THEREOF
摘要
申请公布号	JPH04274368(A)	申请公布日期	1992.09.30
申请号	JP19910034857	申请日期	1991.03.01
申请人	FUJI ELECTRIC CO LTD	发明人	IWAMURO NORIYUKI
分类号	H01L29/68;H01L21/331;H01L29/10;H01L29/36;H01L29/739;H01L29/78	主分类号	H01L29/68
代理机构		代理人
主权项
地址

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