Czochralski-grown silicon single crystal for neutron transmutation doping.

摘要

A CZ silicon single crystal which is particularly suitable for use in neutron transmutation doping (NTD) achieved by irradiating the silicon single crystal with neutron in a nuclear reactor is disclosed, in which an interstitial oxygen concentration of the CZ silicon single crystal is not greater than 0.9 x 10<1><8> cm<-><3> for irradiation in the heavy-water reactor and not greater than 0.50 x 10<1><8> cm<-><3> for irradiation in a light-water reactor. With this interstitial oxygen concentration range, crystal defects induced by the NTD can be annihilated by a restorative heat treatment without involving generation of new defects leading to a reduction in wafer lifetime. The crystal qualities can be restored by the heat treatment. <IMAGE>