Electrostatic chuck.

摘要

Proposed is an electrostatic chuck having an integral five-layered structure and useful in holding and transporting, for example, a semiconductor silicon wafer in the manufacturing process of electronic devices, which is advantageous in respect of the rapidness of the working behavior, in particular, in releasing the chucked body when the voltage applied to the electrodes is turned off. The electrostatic chuck comprises five layers including: (a) a first electrically insulating dielectric layer; (b) an internal electrode layer formed on one surface of the first electrically insulating dielectric layer; (c) a second electrically insulating dielectric layer formed on the internal electrode layer; (d) an electroconductive layer formed on the second electrically insulating dielectric layer; and (e) a third electrically insulating dielectric layer formed on the electroconductive layer.