| 摘要 |
PURPOSE:To decrease mask processes at the time of production, and to increase resistance against radiation by combining a split-word line type static random access memory (SRAM) and a thin-film transistor load type SRAM. CONSTITUTION:Two word lines WL and WL are connected respectively in each transfer transistor. Each thin-film transistor load is composed of a drain region 65 and a source region 66 or a drain region 68 and a source region 69 arranged while holding the channel region 67 or 70 of a semiconductor film and gate electrodes, which are insulated from the channel regions and disposed oppositely. Drains are connected to one impurity region of the thin-film transistor load through a pair contact sections 63 and 64 having the same structure respectively in each driver-transistor at that time, and each driver-transistor is connected to the gate electrode of the driver-transistor of the opposite party. |
