发明名称 |
Electro-optical device and method for driving the same. |
摘要 |
<p>A novel structure of an active electro-optical device is disclosed. The device is provided with complementary thin film insulated gate field effect transistors (TFTs) therein which comprise a P-TFT and an N-TFT. P-TFT and N-TFT are connected to a common signal line by the gate electrodes thereof, while the source (or drain) electrodes thereof are connected to a common signal line as well as to one of the picture element electrodes. In case of driving the active electro-optical device, a gradation display can be carried out in a driving method having a display timing determined in relation to a time F for writing one screen and a time (t) for writing in one picture element, by applying a reference signal in a cycle of the time (t), to the signal line used for a certain picture element driving selection, and by applying the select signal to the other signal line at a certain timing within the time (t), and whereby setting the value of the voltage to be applied to a liquid crystal. <IMAGE></p> |
申请公布号 |
EP0506027(A2) |
申请公布日期 |
1992.09.30 |
申请号 |
EP19920105157 |
申请日期 |
1992.03.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;MASE, AKIRA;HIROKI, MASAAKI |
分类号 |
G02F1/136;G02F1/13;G02F1/1362;G02F1/1368;G09G3/20;G09G3/36;H01L21/336;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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