发明名称 |
METHOD OF MAKING SILICON QUANTUM WIRES |
摘要 |
A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20 % aqueous hydrofluoric acid to produce a layer (5) microns thick with 70 % porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80 % or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6 - 2.0 eV) of the visible spectrum. <IMAGE>
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申请公布号 |
GB2254188(A) |
申请公布日期 |
1992.09.30 |
申请号 |
GB19920009555 |
申请日期 |
1992.05.01 |
申请人 |
THE * SECRETARY OF STATE FOR DEFENCE |
发明人 |
LEIGH-TREVOR * CANHAM;JOHN MICHAEL * KEEN;WENG YEE * LEONG |
分类号 |
H01L21/306;H01L29/06;H01L33/34 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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