| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor device which has improved reliability and flattening property. CONSTITUTION:A polycrystalline silicon film 6 is formed via SiO2 film 5 on a silicon substrate 1 on which a gate 3 and a polycrystalline silicon film 4 are formed via an insulating film 2. Then, heat treatment is conducted by selectively introducing oxygen into the region which becomes an insulating area to form a SiO2 film 8. Thereafter, a low resistance part 11 is formed by selectively introducing impurity ion to a polycrystalline silicon film 6. Since an insulating part and a conductive part can be formed without the etching process, generation of unetched part and stepped part can be prevented. |
