| 摘要 |
PURPOSE:To obtain depression-type FET having a high-speed of operation by employing an electrode of platinum or an P<+> type semiconductor when a region is of N type and of aluminum or an N<+> type semiconductor when the region is of P type on the occasion that the gate electrode is provided on the semiconductor region through the intermeidary of an insulating film. CONSTITUTION:On the periphery of a P<-> type Si substrate 1 a thich field oxidized film 7 is formed and to the surface of the substrate surrounded by the film 7 is connected an N<-> type layer 2 of which the density of impurities is set to be 10<14>- 3X10<16>/cm<3> so that a vacant layer 11 is easy to expand. Next, in the central bottom part of the layer 2 is formed a P type region 10 by injection of ions, and also by injection of ions, around the regions 2 and 10 N<+> type of source region 5 and drain region 6 are provided. After that, through the intermediary of a very thin gate insulating film whose thickness is 2-200Angstrom , a gate electrode 9 of platinum or the P<+> type semiconductor having a large work function is fitted to the region 2. At this time, when the device is of P channel, as the electrode, aluminum or the N<+> type semiconductor having a small work function is employed. |
