| 摘要 |
PURPOSE:To prevent generation of warpage of wafer and dislocation by misfitting even in the case of stacking a heteroepitaxial growth layer on a substrate having different grating constant. CONSTITUTION:A P-type AlGaAs layer 2, an N-type AlGaAs layer 4 are continuously formed on the surface of a GaAs substrate 1 and an electrode 5 is provided at the upper surface of this N-type AlGaAs layer 4. At the rear surface of substrate 1, a P-type AlGaAs layer 3 is provided to prevent generation of warpage of substrate and dislocation by misfitting. An electrode 6 is also provided to this P-type AlGaAs layer 3. |
