| 摘要 |
A semiconductor laser comprises a semiconductor substrate having first and second surfaces opposing to each other, first and second cladding layers formed on the first surface of the substrate, an active layer of a superlattice structure sandwiched between the first and second cladding layers, a capping layer formed on the second cladding layer, a first electrode provided on the capping layer, and a second electrode connected to the second surface of the substrate. The first surface of the substrate has at least two slanted surfaces whose crystalline planes differ from that of a major surface of the first surface of the substrate, each of the first and second cladding layers and the active layer formed on the substrate has higher carrier density regions above the slanted surfaces, the higher carrier density regions of the active layer are placed in an alloy state, and light is emitted in a region of the active layer which is sandwiched between the alloy regions of the active layer and not placed an an alloy state.
|
