GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE

摘要

PURPOSE:To provide a gallium nitride compound semiconductor light emitting element of good reliability and producibility and its manufacture method without performing any processing for a substrate or without including a complicated process such as manufacturing of a contact hole. CONSTITUTION:A buffer layer 32, an N-layer 34 which consists of N-type gallium nitride compound semiconductor and an I-layer 36 which consists of semiinsulating gallium nitride compound semiconductor are formed on a sapphire substrate 30 one by one (first process). A first electrode (N-side electrode) 40 is formed on a surface of the I-layer 36. A low resistance region 38 which passes through the I-layer 36 and attains the N-layer 34 is formed immediately below the first electrode 40 (third process). A second electrode (I-side electrode) 42 is formed on a surface of the I-layer 35 apart from the first electrode 40 (forth process).