| 摘要 |
PURPOSE:To make the title chip resistant to a thermal stress and to prevent the electrolytic corrosion of a bonded part by a method wherein a bump at the semiconductor chip and a bump at a substrate are bonded in such a way that they are overlapped with each other. CONSTITUTION:An Al pad part 2 is formed on an IC chip 1 as a semiconductor chip. An Au bump 3 is formed on the Al pad part 2 by the ball bonding operation of an Au wire. An Au bump 7 whose material is the same as that of the Au bump 3 on the IC chip 1 is formed, by the wire bonding operation of an Au wire, in a desired position on a glass substrate 4 on which a metallized film 6 has been formed. The Au bump 3 at the IC chip 1 is aligned with the Au bump 7 at the glass substrate 4 in such a way that they are overlapped with each other; the Au bump 3 at the IC chip 1 is bonded to the bump 7 at the glass substrate 4. Thereby, the chip is made resistant to a thermal stress, and it is possible to prevent the electrolytic corrosion of a bonded part. |
