发明名称 WAFER SCALE INTEGRATED DEVICE
摘要 A wafer scale integration device comprises a plurality of real chips (2R1,2R2) formed in the center portion of a wafer (1) and a plurality of dummy chips (2D) formed in the circumference of the wafer (1). The dummy chips (2D) only include relay pads (7), some of the relay pads (7) are used for relaying bonding wires of power supply lines (4). Consequently, the power supply lines (4) do not short-circuit at edge portions of the wafer (1), since a length of the bonding wire at the edge portion of the wafer becomes short due to the relay pad (7) connected to the bonding wire.
申请公布号 KR920008423(B1) 申请公布日期 1992.09.28
申请号 KR19890007512 申请日期 1989.06.01
申请人 FUJITSU LTD 发明人 TADEMATSU TAKEO
分类号 H01L27/10;G11C5/06;G11C29/00;H01L21/60;H01L21/82;H01L23/52;H01L23/528 主分类号 H01L27/10
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