发明名称 A CATHODE IN CRT
摘要 The method for mfg. a cathode comprises (a) heating a cathode cap containing Ni, 0.03-0.1 wt.% Si and 0.03-0.1 wt.% Mg in the vacuum furnace at 700-900 deg.C, (b) carburizing the surface of the cathode cap with a carburizing gas to form 10-80 m carburized layer, (c) ultrasonic cleaning the cathode cap, (d) fixing the cap to the sleeve, (e) spray-coating an alkali earth metal on the cap to form a thermionic emission layer, and (f) activating the layer. The layer comprises a ternary carbonate of Ba, Sr and Ca, and 0.1-20 wt.% rare earth metal oxide.
申请公布号 KR920008299(B1) 申请公布日期 1992.09.26
申请号 KR19900014742 申请日期 1990.09.14
申请人 SAMSUNG ELECTRON DEVICE CO., LTD. 发明人 LEE, AN - SOP;SON, KYONG - CHON
分类号 H01J1/14;(IPC1-7):H01J1/14 主分类号 H01J1/14
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