Interconnection structure in a semiconductor device and its method of fabrication

摘要

Interconnection structure for connecting a thin conducting layer (30) and a metallisation (60), comprising a semiconductor substrate (10), an insulating layer (20), a thick conducting layer (50), a first inter-layer insulation layer (40), a first contact hole formed in the first inter-layer insulation layer (40) on the thick conducting layer (50), a thin conducting layer (30) consisting of a vertical structure (30a) and of a horizontal structure (30), a second inter-layer insulation layer (42), a second contact hole formed within the first and second inter-layer insulation layers (40, 42) and crossing the first contact hole, and a metallisation (60) filling the second contact hole. Thus, the contact surface area between the metallisation (60) and the thin conducting layer (30) is increased, thereby producing a reliable direct contact between them.