| 摘要 |
PURPOSE:To highly accurately and precisely form a structure body of semiconductor quantum well thin wires by forming an oxide layer with a window on a semiconductor substrate, with the window being formed highly accurately and precisely, and then, the structure body of semiconductor quantum thin wires on the semiconductor substrate exposed on the bottom of the window by utilizing such a fact that, a semiconductor layer can be formed on a semiconductor substrate, but cannot be formed on an oxide layer by epitaxial growth. CONSTITUTION:An oxide layer 9 having a window 7 is formed on a semiconductor substrate 1 in such a way that, after a semiconductor layer 2 which is more easily oxidized than a semiconductor substrate 1 is thinly formed on the substrate 1, the window 7 is formed and the oxide layer 9 is formed by oxidizing the surface of the layer 2. After the layer 9 is formed, a semiconductor layer 2 is formed on the substrate 1 exposed on the bottom of the window 7 by epitaxial growth by utilizing such a fact that a semiconductor layer can be formed on a semiconductor substrate, but cannot be formed on an oxide layer by epitaxial growth. Thus a structure body of semiconductor quantum thin wire is formed on the substrate 1 exposed on the bottom of the window 7 opened in the oxide layer 9. |
