| 摘要 |
PURPOSE:To prevent that a peculiar crosshatched pattern caused by a GaAsP substrate and a dislocation are propagated. CONSTITUTION:An Si-doped GaInP layer 2 is formed on a GaAsP substrate 1. When the Si-doped GaInP epitaxial layer 2 is formed, a layer whose dislocation density is low and whose surface is flat can be obtained. Consequently, when an LED or an LD is manufactured on a semiconductor material by this invention, its performance and its reliability can be enhanced remarkably. The title material is especially effective in an orange to green light-emitting element. |
