LIQUID PHASE EPITAXIAL GROWTH METHOD OF SILICON CARBIDE

摘要

PURPOSE:To provide the title liquid phase epitaxial growing method of 6H type silicon carbide single crystal thin film applicable to the manufacture of silicon carbide blue light emitting diode in high luminous intensity. CONSTITUTION:Within the title liquid epitaxial growing method wherein the silicon carbide thin film is grown on the silicon carbide single crystal substrate by immersing substrate in a silicon melted solution contained in a crucible, as for said substrate, (0001) surface of 4H type silicon carbide single crystal is used and the temperature of the silicon melted solution near substrate is specified to be at 1650 deg.C-1900 deg.C while the growing rate of said silicon carbide single crystal thin film is specified not to exceed 30mum/h so that said 6H type silicon carbide single crystal thin film may hetero-epitaxially be grown on the 4H type silicon carbide single crystal substrate.