| 摘要 |
PURPOSE:To improve reliability of static RAM by generating dislocation to a grounded source diffused region of a static RAM to get out contamination substances and crystal defects within a storing node diffused layer region. CONSTITUTION:On the occasion of forming source diffused regions 11, 12 to be grounded to storing node diffused layer regions 13, 14 in manufacture of a memory cell 1 of a static RAM, dislocation is generated only in the grounded source diffused layer regions 11, 12 and thereafter contamination substance and crystal defect in the storing node diffused layer regions 13, 14 are got out by the dislocation generated in the source diffused layer regions 11, 12. |
