VERFAHREN ZUR KONTAKTIERUNG VON LEITENDEN STRUKTUREN IN HOECHSTINTEGRIERTEN SCHALTKREISEN

摘要

The invention relates to a method for establishing contacts on conducting structures in circuits with very high integration density. In order to establish contacts on conducting structures on a substrate (20) with the aid of a laser light (23) and with at least one gaseous metallic compound in a vacuum chamber, first of all at least one insulating layer (21) covering over the conducting structure (22) and transparent to ultraviolet is removed locally and, then, the metal layer (24) is deposited locally on the structure (22), by adjusting the power of the laser, the pressure of the gaseous compound and the irradiation surface of the substrate. Application especially to fabricating circuits with very high integration density.