| 摘要 |
<p>PURPOSE:To exactly inspect write in conditions of memory cells without being affected by the external voltage variation during a program verifying mode. CONSTITUTION:A first boosting circuit CP1 boosts an external power supply CC and the boosted voltage is clamped to a prescribed voltage by a clamping circuit CL1. The clamped voltage is adjusted by a first resistor 100 and a first and a second field effect transistors Q11 and Q12 and the program verifying voltage is generated.</p> |
