| 摘要 |
PURPOSE:To improve the sensitivity of an image pickup element to a short wave-length by providing an impurity region having a shallow region at a part of a gate region of a transistor. CONSTITUTION:A p<+> gate region 24 (24-1, 24-2) formed at the outside of an n<+> source region 23, forms the side 24-1 facing its source region 23 by deep diffusion of a p type impurity; the channel of majority carrier formed by an n<-> epitaxial layer 22 is pinched off to guarantee the operation as the SIT. On the other hand, a shallow p<+> type impurity diffusion layer 24-2 is formed at a side opposite to the side facing the source region 23 of the gate region 24. Thus, even if a short wavelength light incident to the gate region through a transparent insulating film 25 is absorbed near the surface, electron/positive hole pairs generated as the result are stored effectively on the gate region 24 and the sensitivity of the image pickup element to the short wavelength is improved. |
