| 摘要 |
PURPOSE:To offer an image sensor which can reduce FPN owing to the operation of a transistor for reading a picture element signal. CONSTITUTION:Photo diodes D1, D2,... are connected to a precharge line LPR through precharge transistors(Tr1)1, (Tr1)2,..., and picture element amplifier transistors(Tr2)1, (Tr2)2,... are connected to a signal read line LRE through picture element switching transistors(Tr3)1, (Tr3)2.... The gates are connected between the precharge transistors(Tr1)1, (Tr1)2,... and the photodiodes D1, D2,.... A timing generation circuit 3 opens/closes the picture element switching transistors(Tr3)1, (Tr3)2,... at every picture element and the difference of a read value from the signal read line LRE is outputted in a correlative double sampling circuit in the close/open state.
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