| 摘要 |
PURPOSE:To improve reliability of a semiconductor device by forming a gate insulating film in such a structure as not easily concentrating electrical field to enhance voltage resistance of the gate insulating film. CONSTITUTION:In a semiconductor device in which a gate 13 is formed on the surface of an insulating film 12 provided on a substrate 11, a gate insulating film 16 is formed to the entire surface in the side of gate 13, source and drain regions 17, 18 are formed on the surface of the gate insulating film 15 in both sides of the gate 13 and a channel forming region 19 is formed on the surface of the gate insulating film 16 between the source and drain 17, 18, side walls 14, 15 are formed in both sides of the gate 13 or an insulating film for alleviating electric field (not illustrated) is formed at the upper surface of both side walls of gate 13 and each side wall thereof. Otherwise, the one end part is located at the thickest part of the insulating film for electric field on the gate 13 and thereby a drain region (not illustrated) is formed on the upper surface of the gate insulating film 16. |
