| 摘要 |
PURPOSE:To widen an accumulation electrode area by making an interval between the adjacent accumulation electrodes smaller than the minimum width which may be realized by the photolithography technology. CONSTITUTION:A field oxide film 2 is formed on a P-type silicon substrate 1 by the LOCOS selective oxidation method. Next, a gate oxide film 5, a gate electrode 6, a source diffused layer 3 and a drain diffused layer 4 are sequentially formed to form an element area of a switching transistor. Next, after depositing a CVD oxide film 7, a contact hole to be connected with the drain 4 is opened. Thereafter, after polysilicon is grown, a polysilicon electrode 8 is formed by the photolithography. A selective silicon film 9 is grown on the surface using the polysilicon electrode 8 as a core of growth and the surface of selective silicon film 9 is formed as a charge accumulation region. Here, when the minimum interval of the polysilicon electrodes 8 is defined as t, the growth film thickness of the selective silicon film 9 is set to t/2 or less. |
