| 发明名称 |
Semiconductor device with low concentration n region to improve dV/dt capability. |
| 摘要 |
<p>A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower doping concentration than that of the first and second main electrodes of the VDMOS transistor for forming a Schottky barrier diode. <IMAGE></p> |
| 申请公布号 |
EP0505191(A1) |
申请公布日期 |
1992.09.23 |
| 申请号 |
EP19920302392 |
申请日期 |
1992.03.19 |
| 申请人 |
HARRIS CORPORATION |
发明人 |
JONES, FREDERICK PETER;YEDINAK, JOSEPH ANDREW;NEILSON, JOHN MANNING SAVIDGE;WRATHALL, ROBERT STEPHEN;MANSMANN, JEFFREY GERARD;JACKOSKI, CLAIRE ELIZABETH |
| 分类号 |
H01L21/8234;H01L27/088;H01L29/78 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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