| 摘要 |
<p>A thermal type infrared sensor includes a bridge portion formed on a semiconductor substrate so as to bridge a cave portion formed in the substrate, a thermal sensitive film formed on the bridge portion and a pair of electrodes formed in the thermal sensitive film. The thermal sensitive film has in the whole thereof a first ion implantation region in which impurities of a first species are injected, and the electrodes are formed as concentrated impurity regions in which impurities of a second species being same as the first species are further injected so that the electrodes have the same conductivity as that of the first ion implantation region. Alternatively, impurities are doped into the thermal sensitive film so that the film has a similar property to that of an intrinsic semiconductor, and the electrodes are made of a siliside, such as silicon siliside. <IMAGE> <IMAGE></p> |
