POWER SWITCHING MOS TRANSISTOR

摘要

A power switching metal oxide semiconductor (PSMOS) transistor comprises a plurality of vertical double-diffused MOS (VDMOS) transistors formed on a semiconductive substrate of a first type conductivity and a device for bypassing avalanche carriers generated at the time of turning OFF the vertical double-diffused MOS transistors. The bypass device includes a first semiconductive region, which is spaced from the MOS transistor, of a second type conductivity formed on the semiconductor substrate and a conductive line for connecting the first semiconductive region to a source electrode of the MOS transistor.