| 摘要 |
<p>Thin films of single crystal, phosphorus-alloyed cubic boron nitride are provided on, and in crystallographic registry with, an underlying silicon substrate which is oriented along a single crystallographic axis. The phosphorus-alloyed cubic boron nitride films are deposited using laser ablation methods. The phosphorus-alloyed boron nitride film has a crystallographic lattice constant which can be systematically varied depending upon the desired film composition and processing parameters. Preferably, the boron nitride target, and accordingly the resulting thin film composition, is characterized by a chemical formula of BN(1-x)P(x) where x is about 0.23. This particular composition results in a crystallographic lattice constant essentially equal to the single crystal silicon substrate. The phosphorus concentration may also be decreased to zero throughout the film so as to provide boron nitride material at the surface, which is characterized by a good crystallographic lattice match with the underlying substrate. The resulting films are particularly suitable for semi-conducting applications over a wide range of temperatures.</p> |
