| 发明名称 |
Bipolar transistor and method of fabricating the same. |
| 摘要 |
<p>To eliminate misfit dislocation occurring in a hetero-interface and to provide a bipolar transistor capable of a high speed operation, the bipolar transistor is configured such that the energy band gap is progressively narrowing from part of an emitter layer (11) towards part of a collector layer (13) through a base layer (12). <IMAGE></p> |
| 申请公布号 |
EP0504875(A2) |
申请公布日期 |
1992.09.23 |
| 申请号 |
EP19920104781 |
申请日期 |
1992.03.19 |
| 申请人 |
HITACHI, LTD. |
发明人 |
SHOJI, KENICHI;FUKAMI, AKIRA;NAGANO, TAKAHIRO |
| 分类号 |
H01L29/165;H01L21/331;H01L29/161;H01L29/167;H01L29/73;H01L29/737 |
主分类号 |
H01L29/165 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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