| 摘要 |
PURPOSE:To form a non-single crystalline semiconductor deposition film containing silicon atoms which is suitable to obtain a solar cell improved in optoelectric conversion efficiency, excellent in electrical characteristics and shows deterioration little with time. CONSTITUTION:This apparatus comprises a gas supplier which introduces deposition film forming material gases of cylinders 1071-1076 and oxygen gas of a cylinder 1077 alternately by a selector valve 1008 in a pulse form into a deposition chamber 1001, a vacuum exhauster which keeps the vacuum degree of the deposition chamber 1001 at 10mTorr or less during deposition film formation, microwave suppliers (1002, 1010, etc.) which supply microwave energy into the deposition chamber 1001, and a high frequency power source 1012 which supplies high frequency energy into the deposition chamber. |
