发明名称 SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
摘要 PURPOSE:To enhance withstand voltage of an insulation film formed through oxidation of polysilicon and employed as an electrode for capacitor, or the like. CONSTITUTION:A capacitor is formed of a first conductive layer 14, an insulation layer 21 formed through oxidation thereof, and a second conductive layer 15. The first conductive layer 14 is constituted of a first polysilicon layer 14-1, a barrier layer 20 composed of spontaneous oxidation layer and a second polysilicon layer 14-2 wherein the impurity concentration of the first polysilicon layer 14-1 is set higher than that of the second polysilicon layer 14-2.
申请公布号 JPH04267368(A) 申请公布日期 1992.09.22
申请号 JP19910028338 申请日期 1991.02.22
申请人 ASAHI KASEI MAIKURO SHISUTEMU KK 发明人 SHIOKAWA YOSHIMASA
分类号 H01L21/225;H01L21/316;H01L21/768;H01L21/822;H01L21/8234;H01L23/522;H01L27/04;H01L27/06 主分类号 H01L21/225
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