发明名称 |
MANUFACTURE OF THIN FILM TRANSISTOR ARRAY DEVICE |
摘要 |
<p>PURPOSE:To provide an efficient method of manufacturing a thin film transistor array device which has a low possibility of occurrence of a defect, by improving the pattern of source wiring in a method of manufacturing a thin film transistor array which can be formed of two photo-masks by exposing a photo-resist through a gate wiring as a mask from the rear surface side of a transparent substrate so as to form a photoresist pattern which is aligned with the gate wiring. CONSTITUTION:Simultaneous with the formation of source wiring 7 and pixel electrodes 8, the source wiring 7 is formed thereto with branch parts 7a. Accordingly, even though a breakage occurs at the crossing between the branch part 7a and a gate wiring 2, no defects occur.</p> |
申请公布号 |
JPH04267225(A) |
申请公布日期 |
1992.09.22 |
申请号 |
JP19910028715 |
申请日期 |
1991.02.22 |
申请人 |
SEIKOSHA CO LTD;NIPPON PRECISION CIRCUITS KK |
发明人 |
TANAKA SAKAE;OGIWARA YOSHIHISA;SHIRAI KATSUO |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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