发明名称 MANUFACTURE OF THIN FILM TRANSISTOR ARRAY DEVICE
摘要 <p>PURPOSE:To provide an efficient method of manufacturing a thin film transistor array device which has a low possibility of occurrence of a defect, by improving the pattern of source wiring in a method of manufacturing a thin film transistor array which can be formed of two photo-masks by exposing a photo-resist through a gate wiring as a mask from the rear surface side of a transparent substrate so as to form a photoresist pattern which is aligned with the gate wiring. CONSTITUTION:Simultaneous with the formation of source wiring 7 and pixel electrodes 8, the source wiring 7 is formed thereto with branch parts 7a. Accordingly, even though a breakage occurs at the crossing between the branch part 7a and a gate wiring 2, no defects occur.</p>
申请公布号 JPH04267225(A) 申请公布日期 1992.09.22
申请号 JP19910028715 申请日期 1991.02.22
申请人 SEIKOSHA CO LTD;NIPPON PRECISION CIRCUITS KK 发明人 TANAKA SAKAE;OGIWARA YOSHIHISA;SHIRAI KATSUO
分类号 G02F1/1343;G02F1/136;G02F1/1368;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/1343
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