发明名称 |
Selective chemical vapor deposition of tungsten for microdynamic structures |
摘要 |
A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a substrate. Two beams form micromechanical tweezers that move in three dimensions by the application of potential differences between the beams, and between the beams and the silicon substrate. A high deposition rate selective tungsten CVD process is used to fabricate beams of greater than 3 micrometers thickness in patterned, CVD silicon dioxide trenches ion-implanted with silicon. Tweezers 200 micrometers in length with a cross section of 2.7 by 2.5 micrometers will close upon application of a voltage of less than 150 volts.
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申请公布号 |
US5149673(A) |
申请公布日期 |
1992.09.22 |
申请号 |
US19910762492 |
申请日期 |
1991.09.19 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
MACDONALD, NOEL C.;CHEN, LIANG-YUH;ZHANG, ZUOYING L. |
分类号 |
H01H1/00;H01L21/285;H02N1/00 |
主分类号 |
H01H1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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