| 摘要 |
PURPOSE:To prevent tilting and to increase the yield in fabrication by forming the dielectric film, i.e., Si3N4 film, of capacitor on the exposed surface of a storage electrode prior to etching of an SiO2 film formed through CVD under the storage electrode thereby reinforcing the storage electrode by means of thus formed Si3N4 film. CONSTITUTION:A first SiO2 film 11, a first Si3N4 film 12, a second SiO2 film 13 and a dielectric film, i.e., a second Si3N4 film 14, of capacitor are formed in order on a substrate through CVD. A first polyysilicon film 15 and a dielectric film of capacitor, i.e., a third Si3N4 film 16, are then formed in order on the substrate while covering a contact hole. Ths patterned first polysilicon film 15 is empolyed as the storage electrode of capacitor. The second SiO2 film 13 underneath the umbrealla of the storage electrode is then removed through etching. Thereafter, dielectric film of capacitor, i.e,. a third SiO2 film 18, is formed on the surface of the third Si3N4 film 16, the exposed side face of the first polysilicon film 15 and the exposed surface of the second Si3N4 film 14. |
