| 摘要 |
PURPOSE:To obtain a gallium phosphide green light-emitting element with an improved light-emitting efficiency with an improved reproducibility under stable condition. CONSTITUTION:After an n-type gallium phosphide layer and a p-type gallium phosphide layer are subjected to epitaxial growth in sequence on an n-type gallium phosphide substrate, donor impurities of the n-type gallium phosphide layer can be compensated for by diffusion of zinc by performing heat treatment while mainaining a temperature 12 of 300 deg.C-650 deg.C and a donor concentration of pn junction of the n-type gallium phosphide layer can be reduced, thus obtaining a gallium phosphide green light-emitting element with an improved light-emitting efficiency under stable conditions with an improved reproducibility. |
