| 摘要 |
PURPOSE:To suppress a dark current and heighten sensitivity, by interposing a dark current interception layer of prescribed composition between a transparent electrode and a photoconductive layer comprising a plurality of layers made of Sb2S3 as main constituent. CONSTITUTION:A transparent electrode 2, a dark current interception layer 6 and a photoconductive layer 3 comprising a plurality of layers made of Sb2S3 as main constituent are sequentially provided on a glass plate 1. The dark current interception layer 6 is made of a mixed layer which has a thickness more than 40Angstrom and comprises 10% or more of Sb4OS5 and the rest of pure Sb2S3. To produce the layer 6, metallic Sb and S are sealed in a quartz tube and a mixed material comprising Sb2O3 and pure Sb2S3 or comprising Sb2O3 and pure Sb2S3 containing 10% or more of Sb4OS5 are treated by vacuum evaporation. |
