HIGH TEMPERATURE ANNEALING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method treats silicon wafer with a high temperature before memory integrting process to improve the quality of memory device. The method comprises the first process for heating the wafer at about 1150 deg.C for an hour under O2 and N2 circumstance, the second process for heating the wafer at about 700 deg.C for 10 hours, the third process for heating the wafer at about 950 deg.C, for four hours, and the fourth process for heating the wafer at about 150 deg.C for 1 hours.