发明名称 SURFACE EMITTING TYPE LIGHT-EMITTING DIODE
摘要 PURPOSE:To enhance an element lifetime by reducing lattice defects within an active layer in a surface emitting light-emitting diode having a light reflection layer of a multi-layer structure and make it possible to emit the light at comparatively small operation voltage. CONSTITUTION:A composition of an interface portion of each layer of a light reflection layer formed with a multi-layer structure is continuously made to change as shown in a solid line of Fig.2. Since a lattice mismatching within the light reflection layer is mitigated to restrain a generation of crytical defects, the crytical defects within an active layer formed on the light reflection layer are also reduced and a dark line deterioration due to a dislocation growth at operating is restrained to lengthen an element lifetime. Further, since discontinuity of bands within the light reflection layer is mitigated, an electric resistance is lowered, whereby this embodiment can be operated at a small operation voltage.
申请公布号 JPH04264782(A) 申请公布日期 1992.09.21
申请号 JP19910045975 申请日期 1991.02.19
申请人 YAMAUCHI NORIKATSU;DAIDO STEEL CO LTD 发明人 YAMAUCHI NORIKATSU;HIROYA MASUMI;KATO TOSHIHIRO;SAKA TAKASHI;SUZAWA HIROMOTO
分类号 H01L33/06;H01L33/10;H01L33/30 主分类号 H01L33/06
代理机构 代理人
主权项
地址